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| VISHAY SFH618A / SFH6186 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current Features * Good CTR Linearity Depending on Forward Current * Low CTR Degradation * High Collector-emitter Voltage, V CEO = 55 V * Isolation Test Voltage, 5300 V RMS * Low Coupling Capacitance * End-Stackable, 0.100 " (2.54 mm) Spacing * High Common-mode Interference Immunity * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 A1 C2 i179061 4C 1 3E Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8.0 mm achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation to an operation voltage of 400 VRMS or DC. Order Information Part SFH618A-2 SFH618A-3 SFH618A-4 SFH618A-5 SFH6186-2 SFH6186-3 SFH6186-4 SFH6186-5 SFH618A-3X006 SFH618A-3X007 SFH618A-4X006 SFH618A-5X006 SFH618A-5X007 Remarks CTR 63 - 125 %, DIP-4 CTR 100 - 200 %, DIP-4 CTR 160 - 320 %, DIP-4 CTR 250 - 500 %, DIP-4 CTR 63 - 125 %, SMD-4 CTR 100 - 200 %, SMD-4 CTR 160 - 320 %, SMD-4 CTR 250 - 500 %, SMD-4 CTR 100 - 200 %, DIP-4 400 mil (option 6) CTR 100 - 200 %, SMD-4 (option 7) CTR 160 - 320 %, DIP-4 400 mil (option 6) CTR 250 - 500 %, DIP-4 400 mil (option 6) CTR 250 - 500 %, SMD-4 (option 7) Applications Telecom Industrial Controls Battery Powered Equipment Office Machines Description The SFH618A (DIP) and SFH6186 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits. For additional information on the available options refer to Option Information. Document Number 83673 Rev. 1.5, 20-Apr-04 www.vishay.com 1 SFH618A / SFH6186 Vishay Semiconductors Absolute Maximum Ratings VISHAY Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Power dissipation Test condition Symbol VR Pdiss Value 6.0 70 Unit V mW Output Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 55 7.0 50 100 150 Unit V V mA mA mW Coupler Parameter Isolation test voltage between emitter and detector, refer to Climate DIN 40046, part2, Nov.74 Creepage distance Clearance Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDEO 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s. Dip Soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 0.4 175 1012 10 11 mm mm mm C C C C - 55 to +150 - 55 to +100 100 260 www.vishay.com 2 Document Number 83673 Rev. 1.5, 20-Apr-04 VISHAY SFH618A / SFH6186 Vishay Semiconductors Figure 1. Permissible Power Dissipation vs. Ambient Temperature 200 P -Power Dissipation (mW) tot 150 Phototransistor 100 50 Diode 0 0 18485 25 50 75 100 125 Tamb - Ambient Temperature ( C ) 150 Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Thermal resistance Test condition IF = 5.0 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO Rthja Min Typ. 1.1 .01 25 1070 Max 1.5 10 Unit V A pF K/W Output Parameter Collector-emitter leakage current Collector-emitter capacitance Thermal resistance Test condition VCE = 10 V VCE = 5.0 V, f = 1.0 MHz Symbol ICEO CCE Rthja Min Typ. 10 7 500 Max 200 Unit nA pF K/W Coupler Parameter Collector-emitter saturation voltage Test condition IC = 0.32 mA, IF = 1.0 mA IC = 0.5 mA, IF = 1.0 mA IC = 1.25 mA, IF = 1.0 mA IC = 0.8 mA, IF = 1.0 mA Coupling capacitance Part SFH618A-2 SFH6186-2 SFH618A-3 SFH6186-3 SFH618A-4 SFH6186-4 SFH618A-5 SFH6186-5 Symbol VCEsat VCEsat VCEsat VCEsat CC Min Typ. 0.25 0.25 0.25 0.25 0.25 Max 0.4 0.4 0.4 0.4 Unit V V V V pF Document Number 83673 Rev. 1.5, 20-Apr-04 www.vishay.com 3 SFH618A / SFH6186 Vishay Semiconductors Current Transfer Ratio Parameter IC/IF Test condition IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V Part SFH618A-2 SFH6186-2 SFH618A-2 SFH6186-2 SFH618A-3 SFH6186-3 SFH618A-3 SFH6186-3 SFH618A-4 SFH6186-4 SFH618A-4 SFH6186-4 SFH618A-5 SFH6186-5 SFH618A-5 SFH6186-5 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 63 32 100 50 160 80 250 125 300 200 120 75 Typ. VISHAY Max 125 Unit % % 200 % % 320 % % 500 % % Switching Characteristics Typical Parameter Turn-on time Rise time Turn-off time Fall time Test condition VCC = 5.0 V, IC = 2.0 mA, RL = 100 VCC = 5.0 V, IC = 2.0 mA, RL = 100 VCC = 5.0 V, IC = 2.0 mA, RL = 100 VCC = 5.0 V, IC = 2.0 mA, RL = 100 Symbol ton tr toff tf Min Typ. 6.0 3.5 5.5 5.0 Max Unit s s s s VCC = 5 V Input Pulse INPUT RL VOUT 10% 90% tr ton tf t off Output Pulse isfh618a_10 isfh618a_12 Figure 2. Test Circuit Figure 3. Test Circuit and Waveforms www.vishay.com 4 Document Number 83673 Rev. 1.5, 20-Apr-04 VISHAY SFH618A / SFH6186 Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) VCE = 0.5 V, CTR = f (TA) IF = 1.0 mA, VF = f (TA) isfh618a_01 isfh618a_04 Figure 4. Current Transfer Ratio (typ.) Figure 7. Diode Forward Voltage (typ.) VCE = 0.5 V, CTR = f (TA) TA = 25C, f = 1.0 MHz, CEE = f (VCE) isfh618a_01 isfh618a_02 isfh618a_05 Figure 5. Current Transfer Ratio (typ.) Figure 8. Transistor Capacitance TA = 25C, VF = f (IF) TA = 25C, CE = f (VCE, IF) isfh618a_03 isfh618a_06 Figure 6. Diode Forward Voltage (typ.) Figure 9. Output Characteristics Document Number 83673 Rev. 1.5, 20-Apr-04 www.vishay.com 5 SFH618A / SFH6186 Vishay Semiconductors VISHAY IF = f (TA) TA = 25C, IF = 1.0 mA, VCC = 5.0 V, tON, tR, tOFF, tF, = f (RL) isfh618a_07 isfh618a_09 Figure 10. Permissible Forward Current Diode Figure 11. Switching times (typ.) Package Dimensions in Inches (mm) 2 1 pin one ID .255 (6.48) .268 (6.81) ISO Method A 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3-9 .300 (7.62) typ. .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) i178027 .008 (.20) .012 (.30) www.vishay.com 6 Document Number 83673 Rev. 1.5, 20-Apr-04 VISHAY Package Dimensions in Inches (mm) SFH618A / SFH6186 Vishay Semiconductors SMD pin one ID .255 (6.48) .268 (6.81) .030 (.76) .100 (2.54) R .010 (.25) .070 (1.78) .315 (8.00) min .435 (11.05) .060 (1.52) 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .130 (3.30) .150 (3.81) ISO Method A .375 (9.52) .305 (10.03) .296 (7.52) .312 (7.90) 10 .010 (.25) typ. i178029 4 typ. 1.00 (2.54)typ. .050 (1.27) typ. .0098 (.249) .035 (.102) Lead coplanarity .004 max. .315 (8.00) min. .020 (.508) .040 (1.02) 3-7 Option 6 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN. Option 7 .300 (7.62) TYP . .180 (4.6) .160 (4.1) .315 (8.0) MIN. 18487 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX. Document Number 83673 Rev. 1.5, 20-Apr-04 www.vishay.com 7 SFH618A / SFH6186 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83673 Rev. 1.5, 20-Apr-04 |
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